Effect of hydrogen on p-type epitaxial silicon sheet-resistance measurements

被引：0
|
作者：
Kamins, TI [1 ]
Nauka, K [1 ]
机构：
[1] Hewlett Packard Labs, Palo Alto, CA 94303 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 1998年 / 1卷 / 02期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The hydrogen ambient used during growth of epitaxial silicon layers can leave substantial amounts of adsorbed hydrogen on the surface, leading to a low initial surface potential. As the hydrogen is lost and the surface oxidizes, the surface potential increases, decreasing the conducting thickness of the epitaxial layer and increasing the measured sheet resistance. The surface potential and sheet resistance change rapidly for about one day and approach steady state after several days. (C) 1998 The Electrochemical Society. S1099-0062(98)04-083-8. All rights reserved.
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页码：100 / 101
页数：2
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