Effect of hydrogen on p-type epitaxial silicon sheet-resistance measurements

被引：0
|
作者：
Kamins, TI [1 ]
Nauka, K [1 ]
机构：
[1] Hewlett Packard Labs, Palo Alto, CA 94303 USA
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 1998年 / 1卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The hydrogen ambient used during growth of epitaxial silicon layers can leave substantial amounts of adsorbed hydrogen on the surface, leading to a low initial surface potential. As the hydrogen is lost and the surface oxidizes, the surface potential increases, decreasing the conducting thickness of the epitaxial layer and increasing the measured sheet resistance. The surface potential and sheet resistance change rapidly for about one day and approach steady state after several days. (C) 1998 The Electrochemical Society. S1099-0062(98)04-083-8. All rights reserved.
引用
收藏
页码：100 / 101
页数：2
相关论文
共 50 条
  • [1] NEGATIVE TRANSFER RESISTANCE EFFECT IN P-TYPE SILICON
    SUDEN, EM
    CAMARATA, RJ
    JARMOC, EA
    PROCEEDINGS OF THE IEEE, 1964, 52 (09) : 1051 - &
  • [2] Influence of the screening effect on passivation of p-type silicon by hydrogen
    O. V. Aleksandrov
    Semiconductors, 2002, 36 : 21 - 25
  • [3] Influence of the screening effect on passivation of p-type silicon by hydrogen
    Aleksandrov, OV
    SEMICONDUCTORS, 2002, 36 (01) : 21 - 25
  • [4] Impact of resistance on cathodoluminescence and its application for layer sheet-resistance measurements
    Czerwinski, A.
    Pluska, M.
    Ratajczak, J.
    Szerling, A.
    Katcki, J.
    APPLIED PHYSICS LETTERS, 2008, 93 (04)
  • [5] COMPUTER CALCULATIONS OF SHEET RESISTANCE OF n- AND p-TYPE IMPLANTATIONS IN SILICON.
    Smith, B.J.
    Stephen, J.
    Radiation Effects, 1972, 14 (3-4): : 181 - 184
  • [6] Hydrogen cobalt complexes in p-type silicon
    Jost, W
    Weber, J
    Lemke, H
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (04) : 525 - 530
  • [7] The effect of illumination intensity on the kinetics of hydrogen evolution at p-type silicon
    Babenko, S.D.
    Balakaj, A.A.
    Lavrushko, A.G.
    Simbirtseva, G.V.
    Elektrokhimiya, 322 (62): : 229 - 233
  • [8] The effect of illumination intensity on the kinetics of hydrogen evolution at p-type silicon
    Babenko, SD
    Balakai, AA
    Lavrushko, AG
    Simbirtseva, GV
    RUSSIAN JOURNAL OF ELECTROCHEMISTRY, 1997, 33 (02) : 212 - 214
  • [9] Piezoresistance effect in p-type silicon
    Kanda, Y
    Matsuda, K
    Physics of Semiconductors, Pts A and B, 2005, 772 : 79 - 80
  • [10] Fabrication of p-type porous GaN on silicon and epitaxial GaN
    Bilousov, O. V.
    Geaney, H.
    Carvajal, J. J.
    Zubialevich, V. Z.
    Parbrook, P. J.
    Giguere, A.
    Drouin, D.
    Diaz, F.
    Aguilo, M.
    O'Dwyer, C.
    APPLIED PHYSICS LETTERS, 2013, 103 (11)
12345