A two-level model for heavily irradiated silicon detectors

被引：13
|
作者：
Borchi, E
Bruzzi, M
Li, Z
Pirollo, S
机构：
[1] INFM Firenze, I-50139 Florence, Italy
[2] Dipartimento Energet, I-50139 Florence, Italy
[3] Brookhaven Natl Lab, Upton, NY 11973 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 425卷 / 1-2期
关键词：
D O I：
10.1016/S0168-9002(98)01378-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The Fermi level pinning at a boundary value of approximate to E-v + 0.5 eV, observed in heavily irradiated silicon, has been described considering two main traps related to divacancy (V-2) and carbon-oxygen complex (CiOi), with energy levels at E-c - 0.46 eV (acceptor) and E-v + 0.36 eV (donor), respectively. The appearance of a double junction in irradiated p(+)/n/n(+) silicon detectors is discussed in the framework of the proposed model. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：343 / 346
页数：4
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