Electrically pumped far-infrared population inversion in heterostructures doped by shallow impurity centers

被引：1
|
作者：
Pavlov, SG [1 ]
机构：
[1] DLR, Inst Space Sensor Technol & Planetary Explorat, D-12489 Berlin, Germany
来源：
10TH INTERNATIONAL CONFERENCE ON SHALLOW LEVEL CENTERS IN SEMICONDUCTORS (SLCS-10), PROCEEDINGS | 2003年
关键词：
D O I：
10.1002/pssc.200306202
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrically pumped far-infrared lasers based on intra-center optical transitions of shallow impurity centers embedded in the barrier of a semiconductor heterostructure are proposed. The principles of population inversion between excited states of the impurity center under conditions of ballistic heating of well electrons at low lattice temperature are described.
引用
收藏
页码：726 / 729
页数：4
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