Modeling of p-i-n GaAsPN/GaP MQWs solar cell: towards lattice matched III-V/Si tandem

Dual junction thin film III-V/Si solar cell's efficiencies are limited to 20% because of high dislocation densities (> 10(6)/cm(2)) due to lattice mismatch. GaAsPN is a promising dilute nitride semiconductor lattice matched to silicon and suitable for the optimal bandgap for III-V/Si tandem solar cells. We designed defect tolerant, resonantly coupled asymmetric GaAsPN/GaP quantum wells in the intrinsic region of p-i-n MQWs solar cell for faster collection of photo-carriers (few picoseconds). Optimum number of resonantly coupled quantum wells of GaAsPN/GaP projects short circuit current of 16mA/cite under AM1.5G spectrum using realistic drift-diffusion model. We have also simulated spectral response, JV characteristics and maximum efficiency of GaAsPN/GaP p-i-n MQWs solar cell where efficiency surpass the Shockley Queisser limit for a single-junction device. Index Terms III-V-N semiconductor materials, Resonant thermo-tunneling design, Quantum well, Drift-diffusion model.