Enhanced depth-resolution analysis with medium energy ion scattering (MEIS) for shallow junction profiling

被引：0

作者：

Tajima, J ^{[1
]}

Park, YK ^{[1
]}

Fujita, M ^{[1
]}

Takai, M ^{[1
]}

Schork, R ^{[1
]}

Frey, L ^{[1
]}

Ryssel, H ^{[1
]}

机构：

[1] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Toyonaka, Osaka 5608531, Japan

来源：

2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS | 2000年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A rapid shrinkage in a minimum feature size of integrated circuits (ICs) requires analysis with an enhanced depth resolution for dopants in shallow source-drain regions. Rutherford backscattering Spectroscopy (RBS) with medium energy ion scattering (MEIS) for such analysis should meet the requirement of a depth-resolution of less than 5 nm at a depth of 50 nm in the nest 5 years. A toroidal electrostatic analyzer (TEA) with an energy resolution of 4 x 10(-3) has been used to detect scattering ions. Limitation of energy resolution due to Bohr straggling of probe ions at a shallow implanted depth has been taken into account. Arsenic ions were implanted in SiO2/Si at energy of 5 keV with a dose of 2 x 10(15) /cm(2). An ultra shallow profile with a projected range of 30 nm with a FWHM (full width at hall maximum) of 4.7 +/- 0.4 nm was non-destructively measured.

引用

页码：604 / 606

页数：3

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