Dielectric properties of niobium-based oxide

被引:11
|
作者
Hzez, W. [1 ]
Rahmouni, H. [2 ]
Dhahri, E. [3 ]
Khirouni, K. [1 ]
机构
[1] Univ Gabes, Fac Sci Gabes Cite Erriadh, Lab Phys Mat & Nanomat Appl Environm, Gabes 6079, Tunisia
[2] Univ Kairouan, Inst Super Sci Appl & Technol Kasserine, URMAN, BP 471, Kasserine 1200, Tunisia
[3] Univ Sfax, Fac Sci Sfax, Lab Phys Appl, BP 1171, Sfax 3000, Tunisia
关键词
Niobate; Oxygen deficient; Colossal dielectric constant; Relaxation mechanism; ELECTRIC MODULUS; RELAXATION; CONDUCTION; FILMS;
D O I
10.1016/j.jallcom.2017.07.161
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Oxygen deficient doped niobate, Nd0.7Sr0.3NbO2.7, has been prepared by the conventional solide solide route. Then, dielectric data has been carried out by means of impedance spectroscopy in a wide frequency and temperature ranges. Dielectric properties are analyzed using different dielectric formalisms such as complex permittivity epsilon*, dielectric loss tangent tan (delta) and complex electric modulus M*. These formalisms obey to the Arrhenius law with low values of the activation energy. The highest dielectric constant has been observed at room temperature up to 0.5 MHz which can be suitable for various potential applications. The colossal dielectric constant is related to electrons hopping. The dielectric loss tangent spectra prove the contribution at least of two mechanisms. The scaling behavior of both dielectric loss tangent and imaginary component of electric modulus suggests the relaxation mechanism is temperature independent. The complex electric modulus plot only emphasizes the grain capacitance as smallest capacitance. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:342 / 348
页数:7
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