Dispersion of electron g-factor with optical transition energy in (In,Ga)As/GaAs self-assembled quantum dots

被引：16

作者：

Schwan, A. ^{[1
]}

Meiners, B-M. ^{[1
]}

Henriques, A. B. ^{[2
]}

Maia, A. D. B. ^{[2
]}

Quivy, A. A. ^{[2
]}

Spatzek, S. ^{[1
]}

Varwig, S. ^{[1
]}

Yakovlev, D. R. ^{[1
]}

Bayer, M. ^{[1
]}

机构：

[1] Tech Univ Dortmund, D-44221 Dortmund, Germany

[2] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 23期

基金：

巴西圣保罗研究基金会;

关键词：

SPIN COHERENCE;

D O I：

10.1063/1.3588413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron spin precession about an external magnetic field was studied by Faraday rotation on an inhomogeneous ensemble of singly charged, self-assembled (In,Ga)As/GaAs quantum dots. From the data the dependence of electron g-factor on optical transition energy was derived. A comparison with literature reports shows that the electron g-factors are quite similar for quantum dots with very different geometrical parameters, and their change with transition energy is almost identical. (C) 2011 American Institute of Physics. [doi:10.1063/1.3588413]

引用

页数：3

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