Cold atmospheric pressure gas plasma enhances the wear performance of ultra-high molecular weight polyethylene

被引:30
|
作者
Perni, Stefano [2 ,3 ]
Kong, Michael G. [4 ]
Prokopovich, Polina [1 ,5 ]
机构
[1] Cardiff Univ, Welsh Sch Pharm, Cardiff CF10 3NB, S Glam, Wales
[2] UCL, Eastman Dent Inst, Div Microbial Dis, London WC1X 8LD, England
[3] UCL, Dept Chem, Mat Chem Res Ctr, London WC1H 0AJ, England
[4] Univ Loughborough, Sch Elect Elect & Syst Engn, Loughborough LE11 3TU, Leics, England
[5] Cardiff Univ, Sch Engn, Inst Med Engn & Med Phys, Cardiff CF10 3NB, S Glam, Wales
关键词
Cold atmospheric pressure gas plasma; Total joint and disc arthroplasty; Ultra-high molecular weight polyethylene; Wear simulation; Biomaterial modification; ION-IMPLANTATION; ELASTIC-MODULUS; CROSS-LINKING; RADIATION; FRICTION; UHMWPE; INDENTATION; REPLACEMENT; DEPOSITION; RESISTANCE;
D O I
10.1016/j.actbio.2011.12.007
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
Ultra-high molecular weight polyethylene (UHMWPE) is frequently employed in joint replacements because of its high biocompatibility; however, this material does not exhibit particularly strong wear performance, thus potentially reducing the longevity of such devices. Numerous techniques have been investigated to increase the resistance to wear of UHMWPE, but they are all based on expensive machinery and require a high level of safety precautions. Cold atmospheric pressure gas plasma treatment is an inexpensive process that has been used as a surface modification method and as a sterilization technique. We demonstrate for the first time that a helium/oxygen cold atmospheric pressure gas plasma can be used to enhance the wear performance of UHMWPE without affecting the cytocompatibility of the material. The exposure to a cold atmospheric pressure gas plasma results in a greater level of crosslinking of the polyethylene chains. As a consequence of the higher crosslinking, the material stiffness of the treated surface is increased. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:1357 / 1365
页数:9
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