Optimization of a Long Wavelength Vertical-Cavity Surface-Emitting Lasers by Employing Photonic Crystal

In this work, we attempt to design, simulate and characterize a GaAs-based high power long wavelength vertical-cavity surface-emitting lasers by employing combined single defect photonic crystal index guiding layer and oxide layer. In this way, increases the optical wavelength from 1.541 mu m to 1.568 mu m and the lasing power 85.382 % from 11.349 mW to 21.039 mW at a bias current of 35 mA. The device employs InGaAsP active region, which is sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors. The basic design goal was to obtain vertical-cavity surface-emitting laser with the high power, high slop efficiency for L-band optical fiber application. This paper provides key results of the device characteristics, including the optical wavelength, the output power and threshold current.