p-i-n Homojunction in Organic Light-Emitting Transistors

被引：74

作者：

Bisri, Satria Zulkarnaen ^{[1
]}

Takenobu, Taishi ^{[2
,3
]}

Sawabe, Kosuke ^{[1
]}

Tsuda, Satoshi ^{[1
]}

Yomogidao, Yohei ^{[1
]}

Yamao, Takeshi ^{[4
]}

Hotta, Shu ^{[4
]}

Adachi, Chihaya ^{[5
]}

Iwasa, Yoshihiro ^{[6
,7
,8
,9
]}

机构：

[1] Tohoku Univ, Grad Sch Sci, Dept Phys, Sendai, Miyagi 9808578, Japan

[2] Waseda Univ, Dept Appl Phys, Tokyo, Japan

[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[4] Kyoto Inst Technol, Dept Macromol Sci & Engn, Kyoto 6068585, Japan

[5] Kyushu Univ, Ctr Future Chem, Fukuoka 8190395, Japan

[6] Univ Tokyo, Quantum Phase Elect Ctr, Tokyo 1138656, Japan

[7] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[8] RIKEN, Adv Sci Inst, CERG, Wako, Saitama 3510198, Japan

[9] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 24期

关键词：

RECOMBINATION ZONE; EXCITON DIFFUSION; AMBIPOLAR; MOBILITY;

D O I：

10.1002/adma.201004572

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETS) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs.

引用

页码：2753 / 2758

页数：6

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