Indium-surfactant-assisted epitaxial growth of semi-polar (11(2)over-bar2) plane Al0.42Ga0.58N films

被引：0

作者：

Liang, Zongwen ^{[1
]}

Zhang, Xiong ^{[1
]}

Dai, Qian ^{[1
]}

Luan, Huakai ^{[1
]}

Zhao, Jianguo ^{[1
]}

Wu, Zili ^{[1
]}

Hu, Guohua ^{[1
]}

Cui, Yiping ^{[1
]}

机构：

[1] Southeast Univ, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 20期

关键词：

VAPOR-PHASE EPITAXY; MOLECULAR-BEAM EPITAXY; ALXGA1-XN; ALGAN; SAPPHIRE; WURTZITE;

D O I：

10.1007/s10854-017-7399-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The semi-polar (11 (2) over bar2) plane Al0.42Ga0.58N films were successfully grown on (10 (1) over bar0) oriented m-plane sapphire substrates for the first time with an indium (In)surfactant- assisted metal-organic chemical vapor deposition (MOCVD) technology. The crystal orientation, surface morphology, and electrical properties of the grown semipolar (11 (2) over bar2) plane AlGaN epi-layers were characterized with high-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM), and Hall effect measurements, respectively. The XRD scanning results showed that crystalline quality for the semi-polar (11 (2) over bar2) plane AlGaN epilayer was improved with In-surfactant. The AFM results demonstrated that the root mean square value of the semipolar AlGaN epi-layer samples decreased with increasing the TMIn mole flow rate. Furthermore, the native electron concentration of the unintentionally doped semi-polar (11 (2) over bar2) plane AlGaN epi-layers was decreased from 2.66 x 10(17) to 2.97 x 10(16) cm(-3) due to the significant decrease in nitrogen vacancies (VN) with indium-surfactant-assisted growth process.

引用

页码：15217 / 15223

页数：7