Indium-surfactant-assisted epitaxial growth of semi-polar (11(2)over-bar2) plane Al0.42Ga0.58N films

被引：0
|
作者：
Liang, Zongwen [1 ]
Zhang, Xiong [1 ]
Dai, Qian [1 ]
Luan, Huakai [1 ]
Zhao, Jianguo [1 ]
Wu, Zili [1 ]
Hu, Guohua [1 ]
Cui, Yiping [1 ]
机构：
[1] Southeast Univ, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 20期
关键词：
VAPOR-PHASE EPITAXY; MOLECULAR-BEAM EPITAXY; ALXGA1-XN; ALGAN; SAPPHIRE; WURTZITE;
D O I：
10.1007/s10854-017-7399-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The semi-polar (11 (2) over bar2) plane Al0.42Ga0.58N films were successfully grown on (10 (1) over bar0) oriented m-plane sapphire substrates for the first time with an indium (In)surfactant- assisted metal-organic chemical vapor deposition (MOCVD) technology. The crystal orientation, surface morphology, and electrical properties of the grown semipolar (11 (2) over bar2) plane AlGaN epi-layers were characterized with high-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM), and Hall effect measurements, respectively. The XRD scanning results showed that crystalline quality for the semi-polar (11 (2) over bar2) plane AlGaN epilayer was improved with In-surfactant. The AFM results demonstrated that the root mean square value of the semipolar AlGaN epi-layer samples decreased with increasing the TMIn mole flow rate. Furthermore, the native electron concentration of the unintentionally doped semi-polar (11 (2) over bar2) plane AlGaN epi-layers was decreased from 2.66 x 10(17) to 2.97 x 10(16) cm(-3) due to the significant decrease in nitrogen vacancies (VN) with indium-surfactant-assisted growth process.
引用
收藏
页码：15217 / 15223
页数：7
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