Electron microscopy characterisation of erbium silicide thin films grown on a Si(111) substrate

被引：9
|
作者：
Frangis, N
VanTendeloo, G
VanLanduyt, J
Muret, P
Nguyen, TTA
机构：
[1] UNIV ANTWERP,RIJKSUNIV CTR ANTWERP,EMAT,B-2020 ANTWERP,BELGIUM
[2] CNRS,ETUD PROPRIETES ELECT SOLIDES LAB,F-38042 GRENOBLE 9,FRANCE
来源：
APPLIED SURFACE SCIENCE | 1996年 / 102卷
关键词：
D O I：
10.1016/0169-4332(96)00040-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
ErSi2-x-films (x = 0.1-0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si-substrate was deduced for all samples and observed phases. Different defect modulated structures are formed, They can be described as structural variants (orthorhombic or rhombohedral) of the basic structure, The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures, The ErSi1.9 material contains Si precipitates, illustrating the preference for the ErSi1.7 composition to be maintained.
引用
收藏
页码：163 / 168
页数：6
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