Photoluminescence properties of Zn1-xMgxSe on misoriented GaAs substrates by molecular beam epitaxy

被引：5
|
作者：
Tu, RC [1 ]
Su, YK
Chou, ST
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
[2] Chung Cheng Inst Technol, Dept Elect Engn, Tao Yuan 335, Taiwan
来源：
JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 12期
关键词：
D O I：
10.1063/1.368983
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the photoluminescence (PL) properties of Zn1-xMgxSe epilayers grown on GaAs substrates with different misorientation angles by molecular beam epitaxy. According to the data measured by PL and by electron-probe microanalysis, the Mg incorporation in the Zn1-xMgxSe epilayer decreases with increasing misorientation angle. In addition, the PL spectra showed that the full width at half maxima of the band-edge excitonic emission and the intensity of the defect-related donor-acceptor emission in Zn1-xMgxSe epilayers decreased appreciably when a substrate with a misorientation angle of 15 degrees was used. (C) 1998 American Institute of Physics. [S0021-8979(98)04824-5].
引用
收藏
页码：6877 / 6880
页数：4
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