Modeling point-defect distribution in dislocation-free Si crystals grown from the melt

被引：0
|
作者：
Puzanov, NI
机构：
来源：
INORGANIC MATERIALS | 1996年 / 32卷 / 01期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1 / 9
页数：9
相关论文
共 50 条
  • [31] APPARATUS FOR STUDY OF GROWTH OF DISLOCATION-FREE SILICON MONOCRYSTALS FROM A MELT
    BELETSKA.NI
    BEREZENK.LE
    STEPANOV.GM
    SHASHKOV, YM
    PRIBORY I TEKHNIKA EKSPERIMENTA, 1973, (05): : 234 - 235
  • [32] Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited
    Vanhellemont, Jan
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)
  • [33] Analysis and calculation of the formation of grown-in microdefects in dislocation-free silicon single crystals
    V. I. Talanin
    I. E. Talanin
    N. Ph. Ustimenko
    Crystallography Reports, 2012, 57 : 898 - 902
  • [34] SIMULATION OF THE FORMATION OF PRIMARY GROWN-IN MICRODEFECTS IN DISLOCATION-FREE SILICON SINGLE CRYSTALS
    Talanin, V. I.
    Talanin, I. E.
    Voronin, A. A.
    UKRAINIAN JOURNAL OF PHYSICS, 2007, 52 (02): : 177 - 183
  • [35] Analysis and calculation of the formation of grown-in microdefects in dislocation-free silicon single crystals
    Talanin, V. I.
    Talanin, I. E.
    Ustimenko, N. Ph.
    CRYSTALLOGRAPHY REPORTS, 2012, 57 (07) : 898 - 902
  • [36] GROWTH MECHANISM AND IMPURITY DISTRIBUTION OF SI SINGLE CRYSTALS GROWN FROM MELT
    ABE, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : C96 - &
  • [37] Dislocation-free Czochralski Si crystal growth without the Dash-necking process: Growth from undoped Si melt
    Taishi, T
    Huang, XM
    Fukami, T
    Hoshikawa, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (3AB): : L191 - L194
  • [38] OBSERVATIONS OF SWIRL DEFECTS IN AS-GROWN DISLOCATION-FREE CZ SILICON CRYSTALS.
    Qian Jiajun
    Chu Yiming
    Fan Tiwen
    Lin Lanying
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1984, 5 (04): : 368 - 373
  • [39] THE DISTRIBUTION OF A-TYPE MICRODEFECTS IN DISLOCATION-FREE SILICON SINGLE-CRYSTALS GROWN BY THE FLOATING-ZONE METHOD
    DOBROVENSKY, VV
    NOVIKOV, AG
    TRIPOSHINA, NA
    FOMIN, VG
    SHCHEGOLKOVA, LA
    KRISTALLOGRAFIYA, 1983, 28 (06): : 1222 - 1224
  • [40] Dislocation-free Czochralski Si crystal growth without the Dash-necking process: growth from undoped Si melt
    Taishi, Toshinori
    Huang, Xinming
    Fukami, Tatsuo
    Hoshikawa, Keigo
    Japanese Journal of Applied Physics, Part 2: Letters, 2000, 39 (3 A/B):
12345