Ion beam assisted deposition induced composition changes in titanium nitride

被引:5
|
作者
Gerlach, JW
Wengenmair, H
Hartmann, J
Assmann, W
Rauschenbach, B
机构
[1] UNIV AUGSBURG,INST PHYS,D-86135 AUGSBURG,GERMANY
[2] UNIV MUNICH,SEKT PHYS,D-85748 GARCHING,GERMANY
来源
关键词
D O I
10.1002/pssa.2211550116
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Titanium nitride films were produced by a newly developed photon and ion beam assisted deposition system (PHIBAD system). With an electron beam evaporator titanium was deposited on silicon substrates ill a controlled nitrogen environment. Optionally, tile growing films were bombarded with argon or nitrogen ions and/or illuminated with UV light. With these procedures delta-TiN films with distinct chemical composition were formed. The composition determination was done with elastic recoil detection analysis (ERDA) to avoid the problems usually occurring with standard methods like AES. The results demonstrate that both impurity content and nitrogen to titanium ratio of the films are dependent on the ion current density. UV light illumination also has a positive influence on film composition. Generally, a certain energy transfer to the growing film is necessary to cause composition changes.
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收藏
页码:181 / 188
页数:8
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