Design of Ka band bandpass filter using Silicon Micromachined technology

被引：0
|
作者：
Hong, Qiulong [1 ]
Liu, Xiubo [1 ]
Wang, Shaodong [1 ]
机构：
[1] Hebei Semicond Res Inst, Shijiazhuang 050051, Hebei, Peoples R China
来源：
2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A highly selective Ka band bandpass filter based on a substrate integrated waveguide (SIW) using micromachining technology is proposed. The high dielectric constant silicon is used as a dielectric substrate and metallic via holes are formed by using micromachining drying etching technology. The proposed filter has a good performance and compact size with the high dielectric constant substrate, and precise dimension with the semiconductor technology. Measured results are presented and compared with simulated results. Good agreement between simulated and measured results has been achieved.
引用
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页码：819 / 821
页数：3
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