A Wideband Monolithically Integrated Photonic Receiver in 0.25-μm SiGe:C BiCMOS Technology

被引：0
|
作者：
Eissa, M. H. [1 ]
Awny, A. [1 ]
Winzer, G. [1 ]
Kroh, M. [1 ]
Lischke, S. [1 ]
Knoll, D. [1 ]
Zimmermann, L. [1 ]
Kissinger, D. [1 ,2 ]
Ulusoy, A. C. [1 ,3 ]
机构：
[1] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany
[2] Tech Univ Berlin, Einsteinufer 17, D-10587 Berlin, Germany
[3] Michigan State Univ, ECE Dept, E Lansing, MI 48823 USA
来源：
ESSCIRC CONFERENCE 2016 | 2016年
关键词：
Electronic photonic integrated circuit; transimpedance amplifier;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work presents a 54 Gb/s monolithically integrated silicon photonics receiver (Rx). A germanium photodiode (Ge-PD) is monolithically integrated with a transimpedance amplifier (TIA) and low frequency feedback loop to compensate for the DC input overload current. Bandwidth enhancement techniques are used to extend the bandwidth compared to previously published monolithically integrated receivers. Implemented in a 0.25 mu m SiGe:C BiCMOS electronic/photonic integrated circuit (EPIC) technology, the Rx operates at lambda=1.55 mu m, achieves an optical/electrical (O/E) bandwidth of 47GHz with only +/- 5ps group delay variation and a sensitivity of 0.2dBm for 4.5x10(-11) BER at 40 Gb/s and 0.97dBm for 1.05x10(-6) BER at 54 Gb/s. It dissipates 73mW of power, while occupying 1.6mm(2) of area. To the best of the author's knowledge, this work presents the state-of-the-art bandwidth and bit rate in monolithically integrated photonic receivers.
引用
收藏
页码：487 / 490
页数：4
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