Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

被引：9
|
作者：
Rahman, Md. Mamunur [1 ]
Kim, Dae-Hyun [3 ]
Kim, Tae-Woo [2 ]
机构：
[1] Canadian Univ Bangladesh, Dept EEE, Sch Sci & Engn, Dhaka 1213, Bangladesh
[2] Univ Ulsan, Sch Elect Engn, Ulsan 44610, South Korea
[3] Kyungpook Natl Univ, Sch Elect Engn, Daegu 702701, South Korea
来源：
NANOMATERIALS | 2020年 / 10卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
III-V semiconductor; atomic layer deposition; border trap; constant voltage stress; high-k; interface trap; post metal annealing; GATE DIELECTRICS; OXIDE; HYSTERESIS; CAPACITORS; BEHAVIOR;
D O I：
10.3390/nano10030527
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
This study represents a comparison of the border trap behavior and reliability between HfO2 and ZrO2 films on n-In0.53Ga0.47As with an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N-2:H-2 mixed FGA passivates the border trap quite well, whereas N-2-based RTA performs better on interface traps. Al2O3/HfO2 showed more degradation in terms of the threshold voltage shift while Al2O3/ZrO2 showed higher leakage current behavior. Moreover, Al2O3/ZrO2 showed a higher permittivity, hysteresis, and breakdown field than Al2O3/HfO2.
引用
收藏
页数：12
相关论文
共 50 条
  • [1] Interface trap characterization of AlN/GaN heterostructure with Al2O3, HfO2, and HfO2/Al2O3 dielectrics
    Kim, Hogyoung
    Yun, Hee Ju
    Choi, Seok
    Choi, Byung Joon
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2019, 37 (04):
  • [2] Comparative study on corrosion behavior of plasma sprayed Al2O3, ZrO2, Al2O3/ZrO2 and ZrO2/Al2O3 coatings
    Sathish, S.
    Geetha, M.
    TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, 2016, 26 (05) : 1336 - 1344
  • [3] SLIP CASTING OF AL2O3 AND AL2O3/ZRO2 COMPOSITES
    BELLOSI, A
    GALASSI, C
    GUICCIARDI, S
    JOURNAL OF MATERIALS SCIENCE, 1990, 25 (10) : 4331 - 4340
  • [4] Study of ZrO2/Al2O3/ZrO2 and Al2O3/ZrO2/Al2O3 Stack Structures Deposited by Sol-Gel Method on Si
    Vitanov, P.
    Harizanova, A.
    Ivanova, T.
    Dimitrova, T.
    FUNDAMENTALS AND TECHNOLOGY OF MULTIFUNCTIONAL OXIDE THIN FILMS (SYMPOSIUM G, EMRS 2009 SPRING MEETING), 2010, 8
  • [5] Effect of Al2O3 insertion layer on ferroelectricity in HfO2/ZrO2 nanolaminates
    CHEN H.-Y.
    CHEN Y.-H.
    LIANG Q.-J.
    WANG Z.-G.
    CAO J.
    ZHANG D.
    Transactions of Nonferrous Metals Society of China (English Edition), 2023, 33 (10): : 3113 - 3121
  • [6] TRANSFORMATION ZONES IN AL2O3 CONTAINING TETRAGONAL ZRO2 AND-OR HFO2
    KOSMAC, T
    CLAUSSEN, N
    AMERICAN CERAMIC SOCIETY BULLETIN, 1981, 60 (03): : 383 - 383
  • [7] Effect of Al2O3 insertion layer on ferroelectricity in HfO2/ZrO2 nanolaminates
    Chen, Hai-Yan
    Chen, Yong-Hong
    Liang, Qiu-Ju
    Wang, Zhi-Guo
    Cao, Jun
    Zhang, Dou
    TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, 2023, 33 (10) : 3113 - 3121
  • [8] A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures
    Spassov, D.
    Skeparovski, A.
    Paskaleva, A.
    Novkovski, N.
    THIN SOLID FILMS, 2016, 614 : 7 - 15
  • [9] Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3
    Park, Pan Kwi
    Kang, Sang-Won
    APPLIED PHYSICS LETTERS, 2006, 89 (19)
  • [10] Modification of α-Al2O3 platelet/ZrO2 matrix interface by epitaxial growth of β″-Al2O3 on the α-Al2O3
    Huang, Xue-Ning
    Kuo, Chu Kun
    Nicholson, Patrick S.
    Journal of the American Ceramic Society, 1995, 78 (04): : 892 - 896
12345