Design of a Linear Transconductor Considering Effects of Weak Inversion Region and Mobility Degradation

被引：3
|
作者：
Tongpoon, Pravit [1 ]
Miyazawa, Toshio [1 ]
Matsumoto, Fujihiko [1 ]
Nakamura, Shintaro [1 ]
Noguchi, Yasuaki [1 ]
机构：
[1] Natl Def Acad, Dept Appl Phys, Yokosuka, Kanagawa 2398686, Japan
来源：
2009 INTERNATIONAL SYMPOSIUM ON INTELLIGENT SIGNAL PROCESSING AND COMMUNICATION SYSTEMS (ISPACS 2009) | 2009年
关键词：
D O I：
10.1109/ISPACS.2009.5383848
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A local feedback transconductor is known as a linear transconductor. However, the linearity is deteriorated because of mobility degradation and operating in weak inversion region. In this paper, a new linear MOS transconductor based on a local feedback transconductor is proposed. The proposed circuit employs a square current source circuit and MOSFETs operating in triode region. Simulation results show that the proposed technique is effective for improvement of the linearity of the transconductor.
引用
收藏
页码：280 / 283
页数：4
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