Adjustable voltage dependent switching characteristics of PRAM for low voltage programming of multi-level resistances

被引：0
|
作者：
Kim, Gwihyun [1 ]
Lee, Sanghyun [1 ]
Hong, Seungwoo [1 ]
Baik, Seung Jae [1 ]
Hori, Hideki [2 ]
Ahn, Dong-ho [2 ]
机构：
[1] Hankyong Natl Univ, Dept Elect Elect & Control Engn, Anseong, Gyeonggi Do, South Korea
[2] Samsung Elect Co, Semicond R&D Ctr, Hwaseong Si, Gyeonggi Do, South Korea
来源：
2014 14TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM (NVMTS) | 2014年
关键词：
MLC PRAM; programming pulse; reset initialization; microstructual model; PHASE-CHANGE MEMORY;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Low voltage programming of multi-level-cell phase change random access memory (MLC PRAM) is important for future low power high density applications of PRAM devices [1]. We have characterized voltage dependent resistance switching characteristics of PRAM devices with various voltage pulses, based on which a dual-pulse programming method is systematically proposed to demonstrate some principles of low voltage MLC programming. A microstructural model is also introduced to provide a comprehensive explanation of resistance swiching for various voltage pulses.
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页数：3
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