Refined Appearance Potential Mass Spectrometry for High Precision Radical Density Quantification in Plasma

被引:2
|
作者
Cho, Chulhee [1 ]
Kim, Sijun [1 ]
Lee, Youngseok [1 ]
Jeong, Wonnyoung [1 ]
Seong, Inho [1 ]
Lee, Jangjae [2 ]
Choi, Minsu [1 ]
You, Yebin [1 ]
Lee, Sangho [1 ,3 ]
Lee, Jinho [1 ]
You, Shinjae [1 ,4 ]
机构
[1] Chungnam Natl Univ, Dept Phys, 99 Daehak Ro, Daejeon 34134, South Korea
[2] Samsung Elect, Hwaseong Si 18448, South Korea
[3] Korea Inst Machinery & Mat, 156 Gajeongbuk Ro, Daejeon 34103, South Korea
[4] Chungnam Natl Univ, Inst Quantum Syst IQS, Daejeon 34134, South Korea
基金
新加坡国家研究基金会;
关键词
plasma; quadrupole mass spectrometer; radical density; quantification; SIO2;
D O I
10.3390/s22176589
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
As the analysis of complicated reaction chemistry in bulk plasma has become more important, especially in plasma processing, quantifying radical density is now in focus. For this work, appearance potential mass spectrometry (APMS) is widely used; however, the original APMS can produce large errors depending on the fitting process, as the fitting range is not exactly defined. In this research, to reduce errors resulting from the fitting process of the original method, a new APMS approach that eliminates the fitting process is suggested. Comparing the neutral densities in He plasma between the conventional method and the new method, along with the real neutral density obtained using the ideal gas equation, confirmed that the proposed quantification approach can provide more accurate results. This research will contribute to improving the precision of plasma diagnosis and help elucidate the plasma etching process.
引用
收藏
页数:11
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