Analysis of bistable switching threshold in one-dimensional photonic crystals

被引:0
|
作者
Jiang, MP [1 ]
Shen, XM [1 ]
Jiang, XF [1 ]
Shi, DF [1 ]
机构
[1] Nanjing Univ Sci & Technol, Dept Mat Sci & Engn, Nanjing 210094, Peoples R China
关键词
bistable switching; switching threshold; photonic crystal; defect layer;
D O I
10.1117/12.575490
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We study the optical bistable properties in one-dimensional photonic crystal with symmetric structure (AB)(N)(D())m(BA)(N) where A is high refractive index medium, B is low refractive index medium, D is defect layer, N is the number of layer periods at the left and right of the defect layer. M determines the thickness of the defect layer with Kerr medium. First, we analyze mechanisms producing bistability by the structure consisted of a nonlinear layer sandwiched between Bragg reflectors. Then by using the transfer matrix method, we calculate numerically the threshold value of the bistability switching in one-dimensional photonic crystals with structure (AB)N(D)m(BA)N. The investigations show that the number of layer periods (N) and the thickness of the defect layer (M) influence the threshold value of the bistability switching. We confirm the parameter of the bistability switching to produce the lower threshold value.
引用
收藏
页码:187 / 193
页数:7
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