Optimization of group V switching times for InGaP/GaAs heterostructures grown by LP-MOCVD

被引：0
|
作者：
Yang, Q
Hartmann, QJ
Curtis, AP
Lin, C
Ahmari, DA
Scott, D
Kuo, HC
Chen, H
Stillman, GE
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Mat Sci & Engn, Mat Res Lab, Urbana, IL 61801 USA
来源：
COMPOUND SEMICONDUCTORS 1997 | 1998年 / 156卷
关键词：
D O I：
10.1109/ISCS.1998.711571
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We studied the effect of group V switching times on the formation of interfacial layers in InGaP/GaAs heterostructures grown by LP-MOCVD using low temperature photoluminescence (PL), double crystal x-ray diffraction (DCXRD) and high resolution transmission electron microscopy (HR-TEM). Due to the severe substitution process of P by As, the quality of InGaP-to-GaAs interface was very sensitive to switching times. By optimizing the switching conditions, we were able to minimize the interfacial layers to one monolayer (ML) of In(0.5)G(0.5)As at the GaAs-to-InGaP interface and 1 ML of In0.65Ga0.35P0.15As0.85 at the InGaP-to-GaAs interface. Heterojunction bipolar transistors (HBTs) grown using this switching scheme showed excellent etch selectivity as well as de characteristics.
引用
收藏
页码：95 / 98
页数：4
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