Resonant tunneling devices on SOI basis

被引：3
|
作者：
Majkusiak, Bogdan [1 ]
机构：
[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland
来源：
Nanoscaled Semiconductor-on-Insulator Structures and Devices | 2007年
关键词：
nanoelectronics; silicon-on-insulator; resonant tunneling;
D O I：
10.1007/978-1-4020-6380-0_22
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper reviews achievements and perspectives of building silicon-base resonant tunneling devices in respect to the material and architecture issues, with especial emphasis on the SOI technology.
引用
收藏
页码：341 / 356
页数：16
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