Current-voltage and capacitance-voltage characteristics of metallic polymer/p-type Si Schottky contacts

被引：0
|
作者：
Çakar, M [1 ]
Sadlam, M [1 ]
Onganer, Y [1 ]
Horváth, ZJ [1 ]
Türüt, A [1 ]
机构：
[1] Ataturk Univ, Fac Arts & Sci, Dept Chem, TR-25240 Erzurum, Turkey
来源：
ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/ASDAM.2000.889494
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Metallic polypyrrole polymer/p-Si diodes were studied by current-voltage and capacitance-voltage measurements at room temperature. The diodes exhibited rectifying behaviour with an ideality factor of about 2 and potential barrier height of about 0.54 eV.
引用
收藏
页码：255 / 256
页数：2
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