Current-voltage and capacitance-voltage characteristics of metallic polymer/p-type Si Schottky contacts

被引:0
|
作者
Çakar, M [1 ]
Sadlam, M [1 ]
Onganer, Y [1 ]
Horváth, ZJ [1 ]
Türüt, A [1 ]
机构
[1] Ataturk Univ, Fac Arts & Sci, Dept Chem, TR-25240 Erzurum, Turkey
关键词
D O I
10.1109/ASDAM.2000.889494
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Metallic polypyrrole polymer/p-Si diodes were studied by current-voltage and capacitance-voltage measurements at room temperature. The diodes exhibited rectifying behaviour with an ideality factor of about 2 and potential barrier height of about 0.54 eV.
引用
收藏
页码:255 / 256
页数:2
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