A 660 GHz Up-converter for THz Communications

被引：0

作者：

Deal, William R. ^{[1
]}

Leong, Kevin ^{[1
]}

Zamora, Alexis ^{[1
]}

Gorospe, Ben ^{[1
]}

Khanh Nguyen ^{[1
]}

Mei, Xiao Bing ^{[1
]}

机构：

[1] Northrop Grumman Corp, Falls Church, VA 22042 USA

来源：

2017 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2017年

关键词：

Terahertz; Submillimeter Wave; Indium Phosphide; HEMT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on a 660 GHz transmitter using InP HEMT technology. The transmitter features a x18 multiplier chain, sub-harmonic mixer, and a power amplifier at the output. Tradeoffs in the upconverter topology are discussed, including transmit noise power, RF filtering, and phase noise. With SSPA at the output, this up-converter achieves the highest reported power to date at this frequency. This significantly advances the technology required for submillimeter wave communication.

引用

页数：4

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