Test and Measurement Complex for Investigation of GaN Based High-Brightness Light-Emitting Diodes

被引：0

作者：

Ekhanin, Sergey ^{[1
]}

Tomashevich, Alexander ^{[1
]}

Ermolaev, Alexander ^{[1
]}

Loschilov, Anton ^{[1
]}

机构：

[1] Tomsk State Univ Control Syst & Radioelect TUSUR, Dept Design Units & Components Radioelect Syst, Tomsk, Russia

来源：

2016 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON) | 2016年

关键词：

test and measurement complex; high-brightness light-emitting diode; degradation; volt-ampere characteristic; failure rate acceleration factor;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Test and measurement complex was developed for investigation of degradation process of GaN based light-emitting diode optical and electric characteristics on the basis of the existing measurement complex LED IV Analyzer. Technical data of the developed test and measurement complex were presented, and measurement results of reverse volt-ampere characteristics were shown for light-emitting diodes of low and medium power in the range of micro- and nano-current before and after test under increased operational current. Also measurement results of brightness as function of the diode test time were shown along with evaluation of failure rate acceleration factor for determination of the light-emitting diode service life under specific operation conditions.

引用

页数：4

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