Self-assembled composite quantum dots for photovoltaic applications

被引：5

作者：

Kiravittaya, S ^{[1
]}

Songmuang, R ^{[1
]}

Thainoi, S ^{[1
]}

Sopitpan, S ^{[1
]}

Kanjanachuchai, S ^{[1
]}

Ratanathammapan, S ^{[1
]}

Sawadsaringkarn, M ^{[1
]}

Panyakeow, S ^{[1
]}

机构：

[1] Chulalongkorn Univ, Dept Elect Engn, Fac Engn, Semicond Device Res Lab, Bangkok 10330, Thailand

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916008

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

InAs and InGaAs quantum dots were prepared by MBE onto GaAs substrates. Quantum dots size was found to be 40-50 nm in diameter and 4-7 nm in height by AFM. PL peak of InAs quantum dots is at 980 nm, and at a shorter wavelength for InGaAs dots. Composite InAs/InGaAs quantum dots should give a wider spectral response in solar cell applications. Stabilized performance of quantum dots structure at high temperatures is an attractive feature. A possibility to store photo-generated carriers in the composite structure is another important prospect.

引用

页码：818 / 821

页数：4

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