Infrared reflectivity determination of alloy composition in AlxGa1-xAs and InxGa1-xAs structures

被引：3
|
作者：
Engelbrecht, JAA [1 ]
Botha, JR [1 ]
机构：
[1] UNIV WESTERN CAPE,DEPT PHYS,ZA-7535 BELLVILLE,SOUTH AFRICA
来源：
APPLIED SPECTROSCOPY | 1997年 / 51卷 / 03期
关键词：
infrared reflectance; AlxGa1-xAs; InxGa1-xAs; alloy composition;
D O I：
10.1366/0003702971940332
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Fourier transform infrared reflectance spectroscopy can be used to establish the height of the transverse optic mode peak of AlAs at 361 cm(-1). The peak height is found to be linearly dependent on the aluminum content in AlxGa1-xAs layers on GaAs substrates. Previously published spectra for InxGa1-xAs yielded a similar result for the In content, from the transverse optic mode peak of InAs at 220 cm(-1). A quick and nondestructive technique is proposed for the determination of the aluminum and indium mole fraction in these structures.
引用
收藏
页码：433 / 437
页数：5
相关论文
共 50 条
  • [31] Electron scattering by optical phonons in AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells
    Zianni, X
    Simserides, CD
    Triberis, GP
    PHYSICAL REVIEW B, 1997, 55 (24): : 16324 - 16330
  • [32] Reverse engineering of AlxGa1-xAs/GaAs structures composition by reflectance spectroscopy
    Wosko, M.
    Paszkiewicz, B.
    Tarnowski, K.
    Sciana, B.
    Radziewicz, D.
    Salejda, W.
    Paszkiewicz, R.
    Tlaczala, M.
    OPTO-ELECTRONICS REVIEW, 2011, 19 (04) : 418 - 424
  • [33] Electron scattering by optical phonons in AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells
    Zianni, X.
    Simserides, C. D.
    Triberis, G. P.
    Physical Review B: Condensed Matter, 55 (24):
  • [34] EXCITONIC TRANSITIONS IN PHOTOLUMINESCENCE AND REFLECTIVITY OF GAAS/ALXGA1-XAS SUPERLATTICES
    CINGOLANI, R
    CHEN, Y
    PLOOG, K
    EUROPHYSICS LETTERS, 1988, 6 (02): : 169 - 175
  • [35] Comparative Raman scattering studies of GaAs/AlxGa1-xAs and AlxGa1-xAs/AlAs superlattices
    Zhang, W
    Han, HX
    Chen, Y
    Li, GH
    Wang, ZP
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 1999, 18 (03) : 189 - 194
  • [36] Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications
    Asar, Tarik
    Ozcelik, Suleyman
    Ozbay, Ekmel
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (10)
  • [37] OPTIMIZED STRAINED INXGA1-XAS STRUCTURES FOR DEVICE APPLICATION
    KLEIN, W
    BOHM, G
    TRANKLE, G
    WEIMANN, G
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 36 - 40
  • [38] Structure effects on inter- and intra-band scattering of electrons in GaAs/AlxGa1-xAs and strained InxGa1-xAs/GaAs quantum wells
    Lee, HC
    Sun, KW
    Lee, CP
    10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, 2003, 5023 : 204 - 208
  • [39] GAMMA-X MIXING IN GAAS ALXGA1-XAS AND ALXGA1-XAS ALAS SUPERLATTICES
    TING, DZY
    CHANG, YC
    PHYSICAL REVIEW B, 1987, 36 (08): : 4359 - 4374
  • [40] Piezoresistivity in GaAs/InxGa1-xAs/AlAs superlattice structures
    Zhang, Wendong
    Hu, Jie
    Xue, Chenyang
    Zhang, Binzhen
    Xiong, Jijun
    Qiao, Hui
    Li, Junhong
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2008, 2 (01): : 43 - 45
12345