Versatile α,ω-Disubstituted Tetrathienoacene Semiconductors for High Performance Organic Thin-Film Transistors

被引:78
|
作者
Youn, Jangdae [1 ,5 ]
Huang, Peng-Yi [2 ]
Huang, Yu-Wen [2 ]
Chen, Ming-Chou [2 ]
Lin, Yu-Jou [2 ]
Huang, Hui [1 ,5 ]
Ponce Ortiz, Rocio [1 ,3 ,5 ]
Stern, Charlotte [1 ,5 ]
Chung, Ming-Che [2 ]
Feng, Chieh-Yuan [2 ]
Chen, Liang-Hsiang [4 ]
Facchetti, Antonio [1 ,5 ]
Marks, Tobin J. [1 ,5 ]
机构
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Natl Cent Univ, Dept Chem, Jhongli 32054, Taiwan
[3] Univ Malaga, Dept Phys Chem, E-29071 Malaga, Spain
[4] Ind Technol Res Inst, Proc Technol Div, Display Technol Ctr, Hsinchu 31040, Taiwan
[5] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
关键词
FIELD-EFFECT TRANSISTORS; SELF-ASSEMBLED MONOLAYERS; HIGH-MOBILITY; FUNCTIONALIZED ACENES; FUSED THIOPHENES; PENTACENE; GROWTH; OLIGOTHIOPHENES; OLIGOMERS; DERIVATIVES;
D O I
10.1002/adfm.201101053
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Facile one-pot [1 + 1 + 2] and [2 + 1 + 1] syntheses of thieno[3,2-b]thieno[2',3':4,5]thieno[2,3-d]thiophene (tetrathienoacene; TTA) semiconductors are described which enable the efficient realization of a new TTA-based series for organic thin-film transistors (OTFTs). For the perfluorophenyl end-functionalized derivative DFP-TTA, the molecular structure is determined by single-crystal X-ray diffraction. This material exhibits n-channel transport with a mobility as high as 0.30 cm(2)V(-1)s(-1) and a high on-off ratio of 1.8 x 10(7). Thus, DFP-TTA has one of the highest electron mobilities of any fused thiophene semiconductor yet discovered. For the phenyl-substituted analogue, DP-TTA, p-channel transport is observed with a mobility as high as 0.21 cm(2)V(-1)s(-1). For the 2-benzothiazolyl (BS-) containing derivative, DBS-TTA, p-channel transport is still exhibited with a hole mobility close to 2 x 10(-3) cm(2)V(-1)s(-1). Within this family, carrier mobility magnitudes are strongly dependent on the semiconductor growth conditions and the gate dielectric surface treatment.
引用
收藏
页码:48 / 60
页数:13
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