High electron mobility transistors on plastic flexible substrates

被引：5

作者：

Chen, Wayne ^{[1
]}

Alford, T. L. ^{[2
]}

Kuech, T. F. ^{[3
]}

Lau, S. S. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, San Diego, CA 92093 USA

[2] Arizona State Univ, Sch Mech Aerosp Chem & Mat Engn, Tempe, AZ 85287 USA

[3] Univ Wisconsin, Dept Chem & Biol Engn, Madison, WI 53706 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 20期

基金：

美国国家科学基金会;

关键词：

SILICON; EXFOLIATION; INP;

D O I：

10.1063/1.3593006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The double-flip transfer of indium phosphide (InP) based transistors onto plastic flexible substrates was demonstrated. Modulation doped field effect transistor layers, epitaxially grown on InP bulk substrates, were transferred onto sapphire using a masked ion-cutting process. Following layer transfer, transistors were fabricated at low temperatures (<= 150 degrees C). The device structure was then bonded to flexible substrate, and laser ablation was used to separate the initial bond. The transferred transistors were characterized and exhibited high field-effect mobility (mu(average) similar to 2800 cm(2) V-1 s(-1)). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3593006]

引用

页数：3

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