Nonradiative recombination at threading dislocations in 4H-SiC epilayers studied by micro-photoluminescence mapping

被引：28
|
作者：
Feng, Gan [1 ]
Suda, Jun [1 ]
Kimoto, Tsunenobu [1 ,2 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan
[2] Kyoto Univ, PESEC, Nishikyo Ku, Kyoto 6158510, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 03期
基金：
日本学术振兴会;
关键词：
BEAM-INDUCED CURRENT; SILICON-CARBIDE; DEFECTS; SUBSTRATE; BREAKDOWN; WAFERS; DIODES;
D O I：
10.1063/1.3622336
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Threading dislocations (TDs) in 4H-SiC epilayers have been investigated by means of micro-photoluminescence (mu-PL) mapping at room temperature. Enhanced nonradiative recombination at TDs was confirmed experimentally, resulting in a reduced local PL emission intensity in the mu-PL intensity map performed at 390 nm (near band-edge emission). The behavior of nonradiative recombination at TDs depends on the dislocation type: the screw type of TDs shows stronger effect on the nonradiative recombination activity than the edge type, evidencing a larger local reduction of PL emission intensity. Furthermore, the contrast of TDs in the mu-PL intensity map greatly depends on the carrier lifetimes of the 4H-SiC epilayers. Lifetimes longer than 0.5 mu s are essential to obtain a discernible contrast for the individual TDs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622336]
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页数：5
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