PROPERTIES OF RESONANCE TRANSMISSION THROUGH A SEMICONDUCTOR DOUBLE-WELL STRUCTURE WITH SPIN-ORBIT COUPLING

In this paper, we investigate effects of the Dresselhaus spin-orbit fling, inter-well coupling, and external bias on the dynamics of resonance tunneling through a semiconductor double-well structure. Based on the transfer matrix technique and the single band effective-mass approximation method, the numerical results demonstrate that the transmission peaks of the spin-up and spin-down electrons split due to the Dresselhaus spin-orbit coupling in the double-well structure. As the in-plane wave vector and external electric field increase, the split becomes farther apart. There is a prominent difference between the lifetime of the quasibound energy level for different spin-polarized electrons. The spin-dependent tunneling time is obtained using the time-dependent Schrodinger equation.