Oxygen adsorption on wet-chemically cleaned GaN(0001) surface studied by coaxial impact collision ion scattering spectroscopy

被引：0
|
作者：
Abe, Koji [1 ]
机构：
[1] Nagoya Inst Technol, Dept Elect & Mech Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
来源：
MATERIALS LETTERS | 2022年 / 307卷
关键词：
GaN; Ga2O(3); Oxygen; Adsorption; CAICISS;
D O I：
10.1016/j.matlet.2021.130988
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Oxygen adsorption on wet-chemically cleaned GaN(0001) surface has been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). The intensity variation of time-of-flight spectra obtained by CAICISS was compared with simulation results. The CAICISS analysis showed that oxygen is adsorbed at the top of Ga atoms at the surface. The Ga-O bond distance was estimated to be between 1.80 and 1.85 angstrom. The estimated bond distance is consistent with the Ga-O tetrahedral bond distance in beta-Ga2O3.
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页数：4
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