Plasmonically-enhanced mid-infrared photoluminescence in a metal/narrow-gap semiconductor structure

被引：1
|
作者：
Lu, Pengqi [1 ,2 ]
Cai, Chunfeng [1 ,2 ,3 ]
Zhang, Bingpo [1 ,2 ]
Liu, Bozhi [1 ,2 ]
Wu, Huizhen [1 ,2 ]
Bi, Gang [3 ]
Si, Jianxiao [4 ]
机构：
[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[3] Zhejiang Univ City Coll, Dept Informat & Elect Engn, Hangzhou 310015, Zhejiang, Peoples R China
[4] Zhejiang Normal Univ, Dept Phys, Jinhua 312001, Zhejiang, Peoples R China
来源：
EPL | 2016年 / 114卷 / 03期
关键词：
MOLECULAR-BEAM EPITAXY; SURFACE-PLASMONS; PBTE; DIODES; SILVER; PBSE;
D O I：
10.1209/0295-5075/114/37005
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the enhancement of the mid-infrared (MIR) luminescence intensity in a nanoscale metal/semiconductor structure by the coupling of surface plasmon polaritons (SPPs) with excitons in a narrow-gap semiconductor. The SPPs are efficiently excited by the total internal reflection photons at a metal/semiconductor interface. The intense electric field induced by SPPs, in turn, greatly changes the radiative recombination rates of the excitons generated by the pumping laser and thus the MIR luminescence intensity. The finding avails the understanding of fundamental science of SPs in narrow-gap semiconductors and the development of novel MIR devices. Copyright (C) EPLA, 2016
引用
收藏
页数：6
相关论文
共 50 条
  • [21] THE FARADAY-EFFECT APPROACH TO A STUDY OF AIVBVI NARROW-GAP SEMICONDUCTOR BAND-STRUCTURE
    MARTYNCHUK, EK
    SIZOV, FF
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 145 (01): : 309 - 318
  • [22] Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer
    Lei, W.
    Tan, H. H.
    Jagadish, C.
    APPLIED PHYSICS LETTERS, 2010, 96 (21)
  • [23] Mid-infrared plasmonically induced absorption and transparency in a Si-based structure for temperature sensing and switching applications
    Shahamat, Yadollah
    Vahedi, Mohammad
    OPTICS COMMUNICATIONS, 2019, 430 : 227 - 233
  • [24] NONLINEAR SELF-INTERACTION OF SURFACE MAGNETOPLASMONS AT THE INTERFACE BETWEEN A NARROW-GAP ELECTRON SEMICONDUCTOR AND A METAL
    AZARENKOV, N
    OSTRIKOV, K
    DENISENKO, I
    PHYSICA SCRIPTA, 1994, 49 (04): : 502 - 508
  • [25] Nonlinear self-interaction of surface magnetoplasmons at the interface between a narrow-gap electron semiconductor and a metal
    Azarenkov, Nikola
    Ostrikov, Konstantin
    Denisenko, Igor
    Physica Scripta, 1994, 49 (04) : 502 - 508
  • [26] Direct observation of narrow mid-infrared plasmon linewidths of single metal oxide nanocrystals
    Robert W. Johns
    Hans A. Bechtel
    Evan L. Runnerstrom
    Ankit Agrawal
    Sebastien D. Lounis
    Delia J. Milliron
    Nature Communications, 7
  • [27] Direct observation of narrow mid-infrared plasmon linewidths of single metal oxide nanocrystals
    Johns, Robert W.
    Bechtel, Hans A.
    Runnerstrom, Evan L.
    Agrawal, Ankit
    Lounis, Sebastien D.
    Milliron, Delia J.
    NATURE COMMUNICATIONS, 2016, 7
  • [28] Electronic structure of a narrow-gap semiconductor FeGa3 investigated by photoemission and inverse photoemission spectroscopies
    Arita, M.
    Shimada, K.
    Utsumi, Y.
    Morimoto, O.
    Sato, H.
    Namatame, H.
    Taniguchi, M.
    Hadano, Y.
    Takabatake, T.
    PHYSICAL REVIEW B, 2011, 83 (24):
  • [29] COMPOSITIONAL DEPENDENCE OF THE BAND-STRUCTURE AND MAGNETIC-PROPERTIES OF PBSNMNTE NARROW-GAP SEMIMAGNETIC SEMICONDUCTOR
    STORY, T
    KARCZEWSKI, G
    SWIERKOWSKI, L
    GORSKA, M
    GALAZKA, RR
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 : S138 - S140
  • [30] Crystal Structure, Stability, and Physical Properties of Metastable Electron-Poor Narrow-Gap AlGe Semiconductor
    Viennois, Romain
    Esmilaire, Roseline
    Perriere, Loic
    Haidoux, Abel
    Alleno, Eric
    Beaudhuin, Mickael
    INORGANIC CHEMISTRY, 2017, 56 (19) : 11591 - 11602
12345