Plasmonically-enhanced mid-infrared photoluminescence in a metal/narrow-gap semiconductor structure

被引：1
|
作者：
Lu, Pengqi [1 ,2 ]
Cai, Chunfeng [1 ,2 ,3 ]
Zhang, Bingpo [1 ,2 ]
Liu, Bozhi [1 ,2 ]
Wu, Huizhen [1 ,2 ]
Bi, Gang [3 ]
Si, Jianxiao [4 ]
机构：
[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[3] Zhejiang Univ City Coll, Dept Informat & Elect Engn, Hangzhou 310015, Zhejiang, Peoples R China
[4] Zhejiang Normal Univ, Dept Phys, Jinhua 312001, Zhejiang, Peoples R China
来源：
EPL | 2016年 / 114卷 / 03期
关键词：
MOLECULAR-BEAM EPITAXY; SURFACE-PLASMONS; PBTE; DIODES; SILVER; PBSE;
D O I：
10.1209/0295-5075/114/37005
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the enhancement of the mid-infrared (MIR) luminescence intensity in a nanoscale metal/semiconductor structure by the coupling of surface plasmon polaritons (SPPs) with excitons in a narrow-gap semiconductor. The SPPs are efficiently excited by the total internal reflection photons at a metal/semiconductor interface. The intense electric field induced by SPPs, in turn, greatly changes the radiative recombination rates of the excitons generated by the pumping laser and thus the MIR luminescence intensity. The finding avails the understanding of fundamental science of SPs in narrow-gap semiconductors and the development of novel MIR devices. Copyright (C) EPLA, 2016
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页数：6
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