A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths

被引：7
|
作者：
Loquai, Sven [1 ]
Bunge, Christian-Alexander [2 ]
Ziemann, Olaf [1 ]
Schmauss, Bernhard [3 ]
Kruglov, Roman [1 ]
机构：
[1] Polymer Opt Fiber Applicat Ctr POF AC, D-90489 Nurnberg, Germany
[2] Univ Telecommun Leipzig, Deutsch Telekom AG, D-04277 Leipzig, Germany
[3] Univ Erlangen Nurnberg LHFT, D-91058 Erlangen, Germany
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 2010年 / 28卷 / 18期
关键词：
Analytic model; p-i-n photodetector; large area; short wavelength; SIMULATION;
D O I：
10.1109/JLT.2010.2059372
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fully analytic analysis of the frequency response of a homo-structure p-i-n photodiode is developed to characterize highspeed large-area p-i-n photodiodes. Therefore, the model can easily be implemented in mathematical simulation tools for system analysis. The model accurately describes drift-, diffusion-and parasitic effects and has been experimentally verified up to 3 GHz for a variety of different wavelength from 405 nm to 850 nm far beyond the 3 dB cutoff frequency (up to -35 dB).
引用
收藏
页码：2646 / 2653
页数：8
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