Electrical Transport Mechanism in Al/V2O5/Al Microdevices

被引：1
|
作者：
Ramana, C. V. [1 ]
Naidu, B. Srinivasulu [1 ]
Hussain, O. M. [1 ]
Julien, C. [2 ]
机构：
[1] Sri Venkateswara Univ, Dept Phys, Thin Film Lab, Tirupati 517502, Andhra Pradesh, India
[2] Univ Paris 06, CNRS, Lab Milieux Desordonnes & Heterogenes, UMR 7603, F-75252 Paris 05, France
来源：
IONICS | 2001年 / 7卷 / 1-2期
关键词：
Physical Chemistry; Analytical Chemistry; Vanadium; Film Thickness; Electronic Material;
D O I：
10.1007/BF02375480
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The current-voltage characteristics of metal-insulator-metal microdevices fabricated with electron-beam evaporated vanadium pentoxide films have been studied in order to understand the electrical transport mechanism in these films. The dependence of transport properties on various factors such as film thickness, substrate temperature, and applied field, has been established. The results revealed that the electrical transport follows a Schottky-type mechanism at lower electrical fields and a Poole-Frenkel-type at higher electrical fields than 2x10(6) V/m.
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收藏
页码：130 / 137
页数：8
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