Preparation of Ce-doped CaGa2S4 crystals by melting method and their optical properties

被引：3
|
作者：
Takayama, K [1 ]
Tanaka, K [1 ]
Uchiki, H [1 ]
机构：
[1] Nagaoka Univ Technol, Dept Elect Engn, Nagaoka, Niigata 9402188, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 1B期
关键词：
CaGa2S4; rate equation; excited state absorption (ESA);
D O I：
10.1143/JJAP.44.729
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Transparent Ce-doped CaGa2S4 bulk crystals were synthesized using a self-flux method. These bulks had high transmittance in luminescence region of 450 nm to 600 nm. Dependence of luminescence intensity on excitation power was observed using a pulsed dye laser excitation.. Saturation of luminescence intensity was observed for the first time in this material when the excitation power density exceeded 10 MW/cm(2). This saturation was assumed to result from excited state absorption (ESA), and analyzed with a 4-level transition model involving ESA.
引用
收藏
页码：729 / 731
页数：3
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