Spin-valves of [Ni/Mn](40)/NiFe/Cu/NiFe films were fabricated by the de sputtering method. The exchange coupling field (H-ex) and coercivity (H-c) between the pinned layer and pinning [Ni/Mn] superlattice with an antiferromagnetic phase were investigated in order to optimize the deposition conditions and the annealing process. The maximum values of H-ex and H-c of the [Ni(2 Angstrom)/Mn(3 Angstrom)](40)/NiFe(70 Angstrom)/Cu(30 Angstrom)/NiFe(60 Angstrom) films were 220 Oe and 110 Oe, respectively. However, the magnetoresistance ratio was as small as 0.4 % similar to 1.2 % due to a shunting effect and an interdiffusion between NiFe and Cu. The thermal stability of the film with a Ni-layer thickness of 1.8 Angstrom. and a pinned NiFe layer of 100 Angstrom was the best for the variations tried. From the results of an annealing cycle experiment on the spin-valves based on a [Ni/Mn] superlattice, the blocking temperature is expected to be over 300 degrees C.
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Department of Optical Science and Engineering, Shanghai UltraPrecision Optical Engineering Center, Fudan UniversityDepartment of Optical Science and Engineering, Shanghai UltraPrecision Optical Engineering Center, Fudan University
Minghong Tang
Zongzhi Zhang
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Department of Optical Science and Engineering, Shanghai UltraPrecision Optical Engineering Center, Fudan UniversityDepartment of Optical Science and Engineering, Shanghai UltraPrecision Optical Engineering Center, Fudan University
Zongzhi Zhang
Yanyan Zhu
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Department of Optical Science and Engineering, Shanghai UltraPrecision Optical Engineering Center, Fudan UniversityDepartment of Optical Science and Engineering, Shanghai UltraPrecision Optical Engineering Center, Fudan University
Yanyan Zhu
Bin Ma
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Department of Optical Science and Engineering, Shanghai UltraPrecision Optical Engineering Center, Fudan UniversityDepartment of Optical Science and Engineering, Shanghai UltraPrecision Optical Engineering Center, Fudan University
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Hebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R ChinaHebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R China
Pan, H.
Ma, L.
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Hebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R ChinaHebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R China
Ma, L.
Li, G. K.
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Hebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R ChinaHebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R China
Li, G. K.
Jia, L. Y.
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Hebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R ChinaHebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R China
Jia, L. Y.
Zhen, C. M.
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Hebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R ChinaHebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R China
Zhen, C. M.
Hou, D. L.
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Hebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R ChinaHebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R China
Hou, D. L.
Wang, W. H.
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Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R ChinaHebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R China
Wang, W. H.
Liu, E. K.
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Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R ChinaHebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R China
Liu, E. K.
Chen, J. L.
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Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R ChinaHebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R China
Chen, J. L.
Wu, G. H.
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Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R ChinaHebei Normal Univ, Dept Phys, Hebei Adv Thin Films Lab, Shijiazhuang 050024, Peoples R China