The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applications

被引：1
|
作者：
Magnee, Peter [1 ]
Leenaerts, Domine [2 ]
Van der Heijden, Mark [2 ]
Thanh Viet Dinh [3 ]
To, Ivan [4 ]
Brunets, Ihor [1 ]
机构：
[1] NXP Semicond, Frontend Innovat, Nijmegen, Netherlands
[2] NXP Semicond, Smart Antenna Solut, Eindhoven, Netherlands
[3] NXP Semicond, Frontend Innovat, Leuven, Belgium
[4] NXP Semicond, Frontend Innovat, Chandler, AZ USA
来源：
2021 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS) | 2021年
关键词：
SiGe; BiCMOS; LNA; PA; Wireless Communication; CIRCUIT; RADAR; HBT;
D O I：
10.1109/BCICTS50416.2021.9682483
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Modern communication standards provide very high data rates, which put strict requirements on the technology that is being used. SiGe BiCMOS is still crucial for fulfilling specific functions in communication applications to enable these high data rates. SiGe enables Power Amplifiers with high efficiency for high linear output powers and Low Noise Amplifiers with both good noise performance and high linear gain.
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页数：7
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