Nanocrack formation due to inverse piezoelectric effect in AlGaN/GaN HEMT

被引：9
|
作者：
Mazumdar, Kaushik [1 ]
Kala, Sanam [1 ]
Ghosal, Aniruddha [2 ]
机构：
[1] Indian Sch Mines, Indian Inst Technol, Dept Elect Engn, Dhanbad 826004, Bihar, India
[2] Univ Calcutta, Dept Radio Phys & Elect, 92 APC Rd, Kolkata 700009, India
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2019年 / 125卷
关键词：
Griffith's equation; Inverse piezoelectric effect; Physical degradation; Electrical degradation; Nanocrack formation; GAN;
D O I：
10.1016/j.spmi.2018.04.038
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In AlGaN/GaN HEMTs, electrical degradation occurs due to high-voltage stress operation which can be described by a critical voltage operation by which degradation starts to take place which is irreversible. Our investigation is on how electrical degradation occurs due to physical degradation in the device. In this work using Griffith's Equation and inverse piezo electric effect we have shown how physical degradation affects electrical properties of the device and we have also shown how cracks are generated in AlGaN epitaxial layer of the device. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码：120 / 124
页数：5
相关论文
共 50 条
  • [1] Effect of tensile and compressive strain on the gate leakage current and inverse piezoelectric effect in AlGaN/GaN HEMT devices
    Zhang, Yiqun
    Zhu, Hui
    Liu, Xing
    Zhang, Zhirang
    Xu, Chao
    Ren, Keyu
    Guo, Chunsheng
    Zhang, Yamin
    Zhou, Lixing
    Feng, Shiwei
    APPLIED PHYSICS LETTERS, 2024, 125 (03)
  • [2] Investigation of trap characteristics under the inverse piezoelectric effect in AlGaN/GaN HEMT devices at room temperature and low temperature
    Yao, Zhiwen
    Zhu, Hui
    Li, Yilin
    Xie, Na
    Sun, Yerong
    Zhang, Yiqun
    Liu, Xing
    Zhang, Zhirang
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 38 (05)
  • [3] AlGaN/GaN piezoelectric HEMT's with submicron gates on sapphire
    Chu, KK
    Smart, JA
    Shealy, JR
    Eastman, LF
    COMPOUND SEMICONDUCTOR POWER TRANSISTORS AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXIX), 1998, 98 (12): : 46 - 51
  • [4] The effect of plasma anodization on AlGaN/GaN HEMT
    Moon, S. H.
    Ahn, H. J.
    Lee, J. S.
    Shim, K. H.
    Yang, J. W.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 51 : S258 - S261
  • [5] Survivability of AlGaN/GaN HEMT
    Chen, Yaochung
    Coffie, Rob
    Luo, Wen-Ben
    Wojtowicz, Michael
    Smorchkova, Ioulia
    Heying, Benjamin
    Kim, Young-Min
    Aust, Michael V.
    Oki, Aaron
    2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, : 307 - 310
  • [6] Effect of Passivation on AlGaN/GaN HEMT device performance
    Tilak, V
    Green, B
    Kim, H
    Dimitrov, R
    Smart, J
    Schaff, WJ
    Shealy, JR
    Eastman, LF
    2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 357 - 363
  • [7] STRUCTURAL CHARACTERIZATION OF MOVPE GROWN AlGaN/GaN FOR HEMT FORMATION
    Popok, V. N.
    Aunsborg, T. S.
    Godiksen, R. H.
    Kristensen, P. K.
    Juluri, R. R.
    Cabana, R.
    Pedersen, K.
    REVIEWS ON ADVANCED MATERIALS SCIENCE, 2018, 57 (01) : 72 - 81
  • [8] Effect of GaN cap layer on the electrical properties of AlGaN/GaN HEMT
    Guo, Han
    Tang, Wu
    Zhou, Wei
    Li, Chiming
    ADVANCED MATERIALS AND PROCESS TECHNOLOGY, PTS 1-3, 2012, 217-219 : 2393 - 2396
  • [9] Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT
    Itakura, Hideyuki
    Nomura, Toshihumi
    Arita, Naoki
    Okada, Narihito
    Wetzel, Christian M.
    Chow, T. Paul
    Tadatomo, Kazuyuki
    AIP ADVANCES, 2020, 10 (02)
  • [10] Piezoelectric response of AlGaN/GaN-based circular-HEMT structures
    Lalinsky, T.
    Drzik, M.
    Vanko, G.
    Vallo, M.
    Kutis, V.
    Bruncko, J.
    Hascik, S.
    Jakovenko, J.
    Husak, M.
    MICROELECTRONIC ENGINEERING, 2011, 88 (08) : 2424 - 2426
12345