Metalorganic vapor phase epitaxial growth parameter dependence of phase separation in miscibility gap of InGaAsP

The generation mechanism of the immiscibility of InGaAsP grown by metalorganic vapor phase epitaxy (MOVPE) is investigated. The growth condition dependence of the immiscibility is examined in detail using particular photoluminescence (PL) characteristics observed in the boundary composition between stable and unstable compositional regions. A lower growth rate or a larger V/III ratio is effective for suppressing phase separation. To explain this growth condition dependence, some factors related to surface energy should be taken into consideration.