Crystallization behavior of Sb70Te30 and Ag3In5Sb60Te32 chalcogenide materials for optical media applications

被引：16

作者：

Lee, M. L. ^{[1
]}

Shi, L. P. ^{[1
]}

Tian, Y. T. ^{[2
]}

Gan, C. L. ^{[2
]}

Miao, X. S. ^{[1
]}

机构：

[1] Data Storage Inst, Singapore 117608, Singapore

[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 02期

关键词：

D O I：

10.1002/pssa.200723398

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Addition of In and Ag into eutectic Sb70Te30 fast-growth material was studied. We explored the optical transitions and crystallization kinetics of Sb70Te30 and Ag3In5Sb60Te32 recording films. The results showed that Ag3In5Sb60Te32 has a higher crystallization temperature but a similar melting point compared to Sb70Te30. In both the crystalline and amorphous states, addition of Ag and In increased the refractive index and decreased the extinction coefficient of Sb70Te30. Ag3In5Sb60Te32 has better thermal stability and a lower crystallization speed than Sb70Te30 film. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：340 / 344

页数：5

共 45 条

[31] Observation of Meyer-Neldel relation for non-isothermal crystallization in Se70Te30 and Se70Te28M2 (M = Ag, Sb, Zn) glasses
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Yeon, C
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