Electronic structure and thermoelectric properties of clathrate compounds Ba8AlxGe46-x

被引：25

作者：

Uemura, Takashi ^{[1
]}

Akai, Koji ^{[2
]}

Koga, Kenji ^{[3
]}

Tanaka, Terumitsu ^{[1
]}

Kurisu, Hiroki ^{[1
]}

Yamamoto, Setsuo ^{[1
]}

Kishimoto, Kengo ^{[1
]}

Koyanagi, Tsuyoshi ^{[1
]}

Matsuura, Mitsuru ^{[4
]}

机构：

[1] Yamaguchi Univ, Grad Sch Sci & Engn, Ube, Yamaguchi 7558611, Japan

[2] Yamaguchi Univ, Media & Informat Technol Ctr, Ube, Yamaguchi 7558611, Japan

[3] Tokyo Univ Sci, Dept Mat Sci & Elect, Grad Sch Sci & Engn, Yamaguchi, Sanyo Onoda 7560884, Japan

[4] Open Univ, Yamaguchi Study Ctr, Sanyo Onoda 7560884, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 01期

关键词：

D O I：

10.1063/1.2947593

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermoelectric properties of Al-substituted Ge clathrate compounds Ba8AlxGe46-x were investigated experimentally and theoretically. Polycrystalline Ba8AlxGe46-x (x=12-18) was synthesized by using an arc melting and a spark plasma sintering technique. The obtained samples show the n-type behavior and the carrier concentration decreases with increasing amount of Al composition from x=12 to 16. The reasonably large power factors was obtained: 900-1000 mu W/cm K-2 around 900 K. Theoretically electronic structure of Ba8Al16Ge30 was calculated by means of a first-principles method and then thermoelectric properties were analyzed on the basis of the result of the calculated electronic structure. The calculated thermoelectric properties agree with the experimental results very well in the wide range of temperature between room temperature and 900 K. (c) 2008 American Institute of Physics.

引用

页数：8

共 50 条

[31] High-Temperature Thermoelectric Properties of Polycrystalline Silicon Clathrate Ba8TMxSi46−x (TM = Ni, Pt)
Daisuke Kikuchi
Koji Fujimura
Jun Tadokoro
Miko Matsumoto
Satoshi Yamazaki
Hirokazu Sasaki
Tatsuhiko Eguchi
Kyota Susai
Journal of Electronic Materials, 2016, 45 : 1836 - 1839
[32] Tuning of band gap and thermoelectric properties of type-I clathrate Ba8NixZnyGe46-x-y-zSnz
Falmbigl, M.
Grytsiv, A.
Rogl, P.
Heinrich, P.
Royanian, E.
Bauer, E.
JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 567 : 65 - 72
[33] Reinvestigation of Thermoelectric Properties of n- and p-Type Ba8−dAuxSi46−x−y Clathrate
Shinji Munetoh
Makoto Saisho
Takuya Oka
Toshiko Osada
Hideshi Miura
Osamu Furukimi
Journal of Electronic Materials, 2014, 43 : 2430 - 2434
[34] Influence of Sn-substitution on the thermoelectric properties of the clathrate type-I, Ba8ZnxGe46-x-ySny
Falmbigl, Matthias
Grytsiv, Andriy
Rogl, Peter
Yan, Xinlin
Royanian, Esmaeil
Bauer, Ernst
DALTON TRANSACTIONS, 2013, 42 (08) : 2913 - 2920
[35] Predicting Ground-State Configurations and Electronic Properties of the Thermoelectric Clathrates Ba8AlxSi46-x and Sr8AlxSi46-x
Troppenz, Maria
Rigamonti, Santiago
Draxl, Claudia
CHEMISTRY OF MATERIALS, 2017, 29 (06) : 2414 - 2424
[36] Synthesis and thermoelectric properties of type-I clathrate compounds Si46-xPxTe8
Kishimoto, Kengo
Koyanagi, Tsuyoshi
Akai, Koji
Matsuura, Mitsuru
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (29-32): : L746 - L748
[37] Electronic band structure and low-temperature transport properties of the type-I clathrate Ba8NixGe46-x-y□y
Aydemir, U.
Candolfi, C.
Ormeci, A.
Baitinger, M.
Burkhardt, U.
Oeschler, N.
Steglich, F.
Grin, Yu.
DALTON TRANSACTIONS, 2015, 44 (16) : 7524 - 7537
[38] Electronic structure of Pt-substituted clathrate silicides Ba8Pt x Si46-x (x=4-6)
Borshch, N. A.
SEMICONDUCTORS, 2016, 50 (04) : 427 - 431
[39] Reinvestigation of Thermoelectric Properties of n- and p-Type Ba8-d Au x Si46-x-y Clathrate
Munetoh, Shinji
Saisho, Makoto
Oka, Takuya
Osada, Toshiko
Miura, Hideshi
Furukimi, Osamu
JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (06) : 2430 - 2434
[40] The clathrate Ba8CuxGe46-x-y□y: Phase equilibria and crystal structure
Melnychenko-Koblyuk, Nataliya
Grytsiv, Andriy
Rogl, Peter
Schmid, Harald
Giester, Gerald
JOURNAL OF SOLID STATE CHEMISTRY, 2009, 182 (07) : 1754 - 1760

← 1 2 3 4 5 →