Carbon Nanotube Based Schottky Diodes as Uncooled Terahertz Radiation Detectors

被引:12
|
作者
Fedorov, Georgy [1 ]
Gayduchenko, Igor [2 ]
Titova, Nadezhda [2 ]
Gazaliev, Arsen [2 ]
Moskotin, Maxim [2 ]
Kaurova, Natalia [2 ]
Voronov, Boris [2 ]
Goltsman, Gregory [2 ,3 ]
机构
[1] State Univ, Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia
[2] Moscow State Pedag Univ, Dept Phys, Moscow 119991, Russia
[3] Natl Res Univ Higher Sch Econ, Moscow Inst Elect & Math, Moscow 109028, Russia
来源
基金
俄罗斯基础研究基金会; 俄罗斯科学基金会;
关键词
carbon nanotubes; Schottky diodes; terahertz radiation detectors;
D O I
10.1002/pssb.201700227
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room-temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi-metallic (bandgap of few meV) single-walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 VW-1, while quasi-metallic CNTs are shown to operate up to 2.5 THz.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Terahertz oscillations in semiconducting carbon nanotube resonant-tunneling diodes
    Dragoman, D
    Dragoman, M
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 24 (3-4): : 282 - 289
  • [42] Carbon Nanotube-Based Uncooled Bolometers: Advances and Progress
    Nandi, Sukanta
    Misra, Abha
    ACS MATERIALS LETTERS, 2023, 5 (01): : 249 - 274
  • [43] Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes
    Uchino, T.
    Shimpo, F.
    Kawashima, T.
    Ayre, G. N.
    Smith, D. C.
    de Groot, C. H.
    Ashburn, P.
    APPLIED PHYSICS LETTERS, 2013, 103 (19)
  • [44] Measurement of radiation energy by spectrometric systems based on uncooled silicon detectors
    Vasiliev G.P.
    Voloshyn V.K.
    Deiev O.S.
    Kiprich S.K.
    Maslov N.I.
    Naumov S.V.
    Ovchinnik V.D.
    Potin S.M.
    Shulika M.Y.
    Yalovenko V.I.
    Yalovenko, V. I. (deev@kipt.kharkov.ua), 1600, Izdatel'stvo Nauka (08): : 391 - 397
  • [45] Terahertz emitters and detectors based on carbon nanotubes
    Portnoi, Mikhail E.
    Kibis, Oleg V.
    da Costa, Marcelo Rosenau
    NANOMODELING II, 2006, 6328
  • [46] Planar InP-based Schottky barrier diodes for terahertz applications
    周静涛
    杨成樾
    葛霁
    金智
    Journal of Semiconductors, 2013, (06) : 54 - 57
  • [47] Planar InP-based Schottky barrier diodes for terahertz applications
    Zhou Jingtao
    Yang Chengyue
    Ge Ji
    Jin Zhi
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (06)
  • [48] Planar InP-based Schottky barrier diodes for terahertz applications
    周静涛
    杨成樾
    葛霁
    金智
    Journal of Semiconductors, 2013, 34 (06) : 54 - 57
  • [49] Modeling of GaAs Schottky Diodes for Terahertz Application
    Tang, A. Y.
    Drakinskiy, V.
    Sobis, P.
    Vukusic, J.
    Stake, J.
    2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2, 2009, : 749 - 750
  • [50] Schottky Diodes in CMOS for Terahertz Circuits and Systems
    Zhang, Yaming
    Han, Ruonan
    Kim, Youngwan
    Kim, Dae Yeon
    Shichijo, Hisashi
    Sankaran, Swaminathan
    Mao, Chuying
    Seok, Eunyoung
    Shim, Dongha
    Kenneth, K. O.
    2013 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), 2013, : 43 - 45