Variation of microstructure and transport properties with filament temperature of HWCVD prepared silicon thin films

被引：6

作者：

Gogoi, Purabi ^{[1
]}

Jha, Himanshu S. ^{[1
]}

Agarwal, Pratima ^{[1
]}

机构：

[1] Indian Inst Technol Guwahati, Dept Phys, Gauhati 781039, India

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 14期

关键词：

HWCVD; Nanocrystalline silicon; Microstructure; CHEMICAL-VAPOR-DEPOSITION; HYDROGENATED AMORPHOUS-SILICON; MEDIUM-RANGE ORDER; SI-H FILMS; MICROCRYSTALLINE SILICON; BAND-GAP; DECOMPOSITION; SILANE; CVD;

D O I：

10.1016/j.tsf.2011.01.316

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of hydrogenated silicon are prepared by varying the filament temperature (T(F)) (1600-1900 degrees C) at a deposition rate of 8-12 angstrom/s without using any hydrogen dilution. While the films deposited at low T(F) are amorphous in nature, those deposited at higher T(F) (>= 1800 degrees C) contain nanocrystallites embedded in the amorphous network. The optical band gap (E(04)) of the films (similar to 1.89-1.99 eV) is slightly higher compared to the regular films, which is attributed to the improved short and medium range order as well as the presence of low density amorphous tissues in the grain boundary regions. The films show improved stability under long term light exposure due to more ordered structure and presence of hydrogen mostly as strong Si-H bonds. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：4506 / 4510

页数：5

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